A Survey of Different Barrier layers and Indium Content of InGaAs MOSFETs
Abstract
A barrier layer in an InGaAs MOSFET, which
shows promise for high-performance logic applications due to
enhanced electron mobility, is known to further improve the
electron mobility. In this paper, a detailed investigation of the
impact of different barrier layers on the analog performance of an
InGaAs MOSFET is reported for the first time. The device
parameters for analog applications, such as transconductance (gm
), transconductance-to-drive current ratio (gm /IDS), drain
conductance (gd ), intrinsic gain (gm /gd ), and unity-gain cutoff
frequency (f T ) are studied with the help of a device simulator. A
barrier layer is found to improve the analog performance of such
a device in general; with a double-barrier layer showing the best
performance. An investigation on the impact of varying the
indium content in the channel on the analog performance of an
InGaAs MOSFET with a double-barrier layer is also reported in
this paper. It is found that a higher In content results in better
analog performance of such devices.
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References
“Performance of InGaAs MOSFETsIEEE TRANSACTIONS ON
ELECTRON DEVICES, “VOL. 60, NO. 5,pp 984-1989 MAY 2013
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